Dependence of Carbon Nanotube Field Effect Transistors Performance on Doping Level of Channel at Different Diameters: On/off current ratio

Choosing a suitable doping level of channel relevant to channel diameter is considered for determining the carbon nanotube field effect transistors' performance which seem to be the best substitute of current transistor technology. For low diameter values of channel the ratio of on/off current declines by increasing the doping level. But for higher diameter values there is an optimum point of doping level in obtaining the highest on/off current ratio. For further verification, the variations of performance are justified by electron distribution function's changes on energy band diagram of these devices. The results are compared at two different gate fields.Comment: 9 double spaced pages, 4 figures, published in applied physics letters, along with the terms of the American Institute of Physics Transfer of Copyright Agreement at first pag

PUF-BASED SOLUTIONS FOR SECURE COMMUNICATIONS IN ADVANCED METERING INFRASTRUCTURE (AMI)

Advanced Metering Infrastructure (AMI) provides two-way communications between the utility and the smart meters. Developing authenticated key exchange (AKE) and broadcast authentication (BA) protocols to provide the security of unicast and broadcast communications in AMI is an essential part of AMI design. The security of all existing cryptographic protocols are based on the assumption that secret information are stored in the non-volatile memory of each party. These information must be kept unknown to the adversary. Unfortunately, in an AMI network, the attackers can obtain some or all of the stored secret information from non-volatile memories by a great variety of inexpensive and fast side channel attacks. Especially, the smart meters which are located in physically insecure environments are more vulnerable to these attacks. Thus, all existing AKE and BA protocols are no longer secure against such attacks. In this paper, we investigate how to develop secure AKE and BA protocols with the presence of memory attack. As a solution, we propose to embed a Physical Unclonable Function (PUF) in each communicating party which generate the secret values as required without need to store them. By combining PUFs and two well-known and secure protocols, we propose a PUF-based Authenticated Key Exchange protocol (PUF-AKE) for unicast communications and a PUF-based Broadcast Authentication (PUF-BA) for broadcast communications. We show that our proposed protocols are memory leakage resilient. Also, we prove the security of them in a standard model. Performance analysis of both of the protocols show they are efficient for AMI applications. The proposed protocols can be easily implemented in AMI networks

On DPA-Resistive Implementation of FSR-based Stream Ciphers using SABL Logic Styles

The threat of DPA attacks is of crucial importance when designing cryptographic hardware. This contribution discusses the DPA-resistant implementation of two eSTREAM finalists using SABL logic styles. Particularly, two Feedback Shift Register (FSR) based stream ciphers, Grain v.1 and Trivium are designed in both BSim3 130nm and typical 350nm technologies and simulated by HSpice software. Circuit simulations and statistical power analysis show that DPA resistivity of SABL implementation of both stream ciphers has a major improvement. The paper presents the tradeoffs involved in the circuit design and the design for performance issues

True random number generator based on the variability of the high resistance state of RRAMs

Hardware-based security primitives like True Random Number Generators (TRNG) have become a crucial part in protecting data over communication channels. With the growth of internet and cloud storage, TRNGs are required in numerous cryptographic operations. On the other hand, the inherently dense structure and low power characteristics of emerging nanoelectronic technologies such as resistive-switching memories (RRAM) make them suitable elements in designing hardware security modules integrated in CMOS ICs. In this paper, a memristor based TRNG is presented by leveraging the high stochasticity of RRAM resistance value in OFF (High Resistive) state. In the proposal, one or two devices can be used depending on whether the objective is focused on saving area or obtaining a higher random bit frequency generation. The generated bits, based on a combination of experimental measurements and SPICE simulations, passed all 15 National Institute of Standards and Technology (NIST) tests and achieved a throughput of tens of MHz.Postprint (published version

Simulation of Placement and Routing Nanowire Interconnect in FPNI

No abstract available

Performance dependency on doping level of carbon nanotube for ballistic CNTFETs

Carbon nanotube (CNT) could be exploited as a channel or source/drain region in field effect transistors (FETs). We theoretically investigate the impact of CNT doping level on a coaxially gated CNTFET's performance in the ballistic regime. The results show that the transconductance and subthreshold swing are independent of the CNT doping value. But threshold voltage and output conductance strongly depend on the channel doping level. It seems that the most important impact of CNT doping is the change in off-state current values resulting in a shift in the transfer characteristics of the device. However, it is possible to choose an optimal value of CNT doping to obtain the highest performance

Placement and configuration of nanowires CMOL technology

No abstract available

Field Programmable Nanowire Interconnect

No abstract available